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KPDA100P-H8-B

KPDA100P-H8-B CEL

kpda100p-h8_en.pdf Виробник: CEL
Description: SENSOR PHOTODIODE 780NM TO206AA
Packaging: Bag
Package / Case: TO-206AA, TO-18-3 Metal Can
Wavelength: 780nm
Mounting Type: Through Hole
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Spectral Range: 400nm ~ 1000nm
Responsivity @ nm: 0.45 A/W @ 850nm
Active Area: 1mm Dia
Current - Dark (Typ): 30pA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
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Технічний опис KPDA100P-H8-B CEL

Description: SENSOR PHOTODIODE 780NM TO206AA, Packaging: Bag, Package / Case: TO-206AA, TO-18-3 Metal Can, Wavelength: 780nm, Mounting Type: Through Hole, Diode Type: Avalanche, Operating Temperature: -40°C ~ 85°C, Spectral Range: 400nm ~ 1000nm, Responsivity @ nm: 0.45 A/W @ 850nm, Active Area: 1mm Dia, Current - Dark (Typ): 30pA, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V.