KSD882YSTSTU

KSD882YSTSTU ON Semiconductor


3904185466340500ksd882.pdf Виробник: ON Semiconductor
Trans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Rail
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Технічний опис KSD882YSTSTU ON Semiconductor

Description: TRANS NPN 30V 3A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V, Frequency - Transition: 90MHz, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 1 W.

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KSD882YSTSTU KSD882YSTSTU Виробник : onsemi ksd882-d.pdf Description: TRANS NPN 30V 3A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
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