LGB8207ATH LITTELFUSE
Виробник: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 365V
Collector current: 20A
Power dissipation: 165W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: automotive industry; ignition systems
Version: ESD
Gate-emitter voltage: ±15V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 365V
Collector current: 20A
Power dissipation: 165W
Case: D2PAK
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: automotive industry; ignition systems
Version: ESD
Gate-emitter voltage: ±15V
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Технічний опис LGB8207ATH LITTELFUSE
Category: SMD IGBT transistors, Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level, Type of transistor: IGBT, Collector-emitter voltage: 365V, Collector current: 20A, Power dissipation: 165W, Case: D2PAK, Pulsed collector current: 50A, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: logic level, Application: automotive industry; ignition systems, Version: ESD, Gate-emitter voltage: ±15V.