LGB8207TH Littelfuse Inc.
Виробник: Littelfuse Inc.Description: IGBT 365V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 0.65µs/4.7µs
Grade: Automotive
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 365 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 165 W
Qualification: AEC-Q101
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис LGB8207TH Littelfuse Inc.
Description: IGBT 365V 20A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 0.65µs/4.7µs, Grade: Automotive, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 365 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 165 W, Qualification: AEC-Q101.
Інші пропозиції LGB8207TH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGB8207TH | Виробник : LITTELFUSE |
Category: SMD IGBT transistors Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; Features: logic level Kind of package: reel; tape Case: D2PAK Version: ESD Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate-emitter voltage: ±15V Collector current: 20A Pulsed collector current: 50A Power dissipation: 165W Collector-emitter voltage: 365V Application: ignition systems |
товару немає в наявності |