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LGD18N45TH LITTELFUSE

pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEA92CC13A66C0C7&compId=LGD18N45TH.pdf?ci_sign=d8e7cf89a2bc8e48f36a07aa84717c88afadb9c5 Виробник: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 18A; 115W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 18A
Power dissipation: 115W
Case: DPAK
Gate-emitter voltage: ±18V
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
кількість в упаковці: 2500 шт
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Технічний опис LGD18N45TH LITTELFUSE

Description: IGBT 500V 18A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 0.42µs/2.9µs, Grade: Automotive, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 115 W, Qualification: AEC-Q101.

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LGD18N45TH LGD18N45TH Виробник : Littelfuse Inc. media?resourcetype=datasheets&itemid=a8ed747f-9034-40f3-87c9-98291cbf8ff9&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgd18n45th_datasheet.pdf Description: IGBT 500V 18A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 0.42µs/2.9µs
Grade: Automotive
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
LGD18N45TH Виробник : LITTELFUSE pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEA92CC13A66C0C7&compId=LGD18N45TH.pdf?ci_sign=d8e7cf89a2bc8e48f36a07aa84717c88afadb9c5 Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 18A; 115W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 18A
Power dissipation: 115W
Case: DPAK
Gate-emitter voltage: ±18V
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.