LGE3M18120Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Power dissipation: 428W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 235nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 220A
Drain-source voltage: 1.2kV
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M18120Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W, Case: TO247-4, Mounting: THT, Power dissipation: 428W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 235nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 220A, Drain-source voltage: 1.2kV, Drain current: 74A, On-state resistance: 34mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M18120Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M18120Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Power dissipation: 428W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 235nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 220A Drain-source voltage: 1.2kV Drain current: 74A On-state resistance: 34mΩ Type of transistor: N-MOSFET |
товару немає в наявності |