LGE3M18120Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M18120Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W, Case: TO247-4, Mounting: THT, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 235nC, On-state resistance: 34mΩ, Drain current: 74A, Pulsed drain current: 220A, Power dissipation: 428W, Drain-source voltage: 1.2kV, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Kind of package: tube, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M18120Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M18120Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W Case: TO247-4 Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 235nC On-state resistance: 34mΩ Drain current: 74A Pulsed drain current: 220A Power dissipation: 428W Drain-source voltage: 1.2kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Kind of package: tube |
товару немає в наявності |