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LGE3M20120Q LUGUANG ELECTRONIC

LGE3M20120Q.pdf
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Технічний опис LGE3M20120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 71A, Power dissipation: 428W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 39mΩ, Mounting: THT, Gate charge: 254nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.