LGE3M45170Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M45170Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W, Mounting: THT, Case: TO247-4, Kind of package: tube, On-state resistance: 90mΩ, Power dissipation: 520W, Drain current: 48A, Pulsed drain current: 160A, Drain-source voltage: 1.7kV, Polarisation: unipolar, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -5...20V, Gate charge: 54nC, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M45170Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M45170Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Mounting: THT Case: TO247-4 Kind of package: tube On-state resistance: 90mΩ Power dissipation: 520W Drain current: 48A Pulsed drain current: 160A Drain-source voltage: 1.7kV Polarisation: unipolar Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -5...20V Gate charge: 54nC |
товару немає в наявності |