LGE3M60065Q LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 78nC
On-state resistance: 75mΩ
Drain current: 36A
Pulsed drain current: 97A
Power dissipation: 208W
Drain-source voltage: 650V
Kind of package: tube
Technology: SiC
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис LGE3M60065Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W, Case: TO247-4, Mounting: THT, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 78nC, On-state resistance: 75mΩ, Drain current: 36A, Pulsed drain current: 97A, Power dissipation: 208W, Drain-source voltage: 650V, Kind of package: tube, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M60065Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| LGE3M60065Q | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W Case: TO247-4 Mounting: THT Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 78nC On-state resistance: 75mΩ Drain current: 36A Pulsed drain current: 97A Power dissipation: 208W Drain-source voltage: 650V Kind of package: tube Technology: SiC |
товару немає в наявності |