LGE3M80120B LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис LGE3M80120B LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 28A, Pulsed drain current: 80A, Power dissipation: 208W, Case: TO247-3, Gate-source voltage: -5...20V, On-state resistance: 0.129Ω, Mounting: THT, Gate charge: 76nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції LGE3M80120B
Фото | Назва | Виробник | Інформація |
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LGE3M80120B | Виробник : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 28A; Idm: 80A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 28A Pulsed drain current: 80A Power dissipation: 208W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.129Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced |
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