LGEGB15N65T2 LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector current: 15A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 10+ | 42.33 грн |
| 25+ | 37.67 грн |
| 100+ | 34.88 грн |
| 400+ | 32.76 грн |
Відгуки про товар
Написати відгук
Технічний опис LGEGB15N65T2 LUGUANG ELECTRONIC
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO263, Type of transistor: IGBT, Power dissipation: 125W, Case: TO263, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Collector current: 15A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 60A, Turn-on time: 40ns, Turn-off time: 150ns, Gate-emitter voltage: ±20V.