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LGEGP15N65T2 LUGUANG ELECTRONIC

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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns

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Технічний опис LGEGP15N65T2 LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO220, Type of transistor: IGBT, Power dissipation: 125W, Case: TO220, Mounting: THT, Gate charge: 45nC, Kind of package: tube, Collector current: 15A, Gate-emitter voltage: ±20V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 60A, Turn-on time: 40ns, Collector-emitter voltage: 650V, Turn-off time: 150ns.