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LGEGW100N65FP

LGEGW100N65FP LUGUANG ELECTRONIC

LGEGW100N65FP.pdf
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Collector current: 100A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
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Технічний опис LGEGW100N65FP LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS, Type of transistor: IGBT, Power dissipation: 500W, Case: TO247PLUS, Mounting: THT, Gate charge: 135nC, Kind of package: tube, Collector current: 100A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 300A, Turn-on time: 205ns, Turn-off time: 375ns, Gate-emitter voltage: ±20V.