LGEGW20N65SEK LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 80A
Turn-on time: 74ns
Turn-off time: 232ns
Gate-emitter voltage: ±30V
Collector current: 20A
Collector-emitter voltage: 650V
Gate charge: 82nC
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.79 грн |
| 4+ | 126.86 грн |
| 10+ | 112.76 грн |
| 30+ | 104.47 грн |
| 120+ | 97.84 грн |
Відгуки про товар
Написати відгук
Технічний опис LGEGW20N65SEK LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Power dissipation: 82W, Case: TO247, Mounting: THT, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 80A, Turn-on time: 74ns, Turn-off time: 232ns, Gate-emitter voltage: ±30V, Collector current: 20A, Collector-emitter voltage: 650V, Gate charge: 82nC.