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LGEGW20N65SEK LUGUANG ELECTRONIC

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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 82nC
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 74ns
Turn-off time: 232ns

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Технічний опис LGEGW20N65SEK LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Power dissipation: 82W, Case: TO247, Mounting: THT, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 82nC, Gate-emitter voltage: ±30V, Collector-emitter voltage: 650V, Collector current: 20A, Pulsed collector current: 80A, Turn-on time: 74ns, Turn-off time: 232ns.