
LGEGW20N65SEK LUGUANG ELECTRONIC

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
4+ | 115.78 грн |
10+ | 102.39 грн |
11+ | 90.58 грн |
29+ | 85.85 грн |
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Технічний опис LGEGW20N65SEK LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Power dissipation: 82W, Case: TO247, Mounting: THT, Kind of package: tube, Collector current: 20A, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 74ns, Gate charge: 82nC, Turn-off time: 232ns.