LGEGW20N65SEK LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 232ns
Turn-on time: 74ns
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.44 грн |
| 4+ | 129.15 грн |
| 10+ | 114.06 грн |
| 30+ | 106.51 грн |
| 120+ | 98.96 грн |
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Технічний опис LGEGW20N65SEK LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 20A, Power dissipation: 82W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Mounting: THT, Gate charge: 82nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 232ns, Turn-on time: 74ns.