Продукція > LUGUANG ELECTRONIC > LGEGW20N65SEK

LGEGW20N65SEK LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EAC9DBB7DB80DF&compId=LGEGW20N65SEK.pdf?ci_sign=f1bb955e3d23fffc73018e47e81a2311210d6ead

Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns

товару немає в наявності

В кошику од. на суму грн.

Відгуки про товар

Написати відгук

Технічний опис LGEGW20N65SEK LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Power dissipation: 82W, Case: TO247, Mounting: THT, Kind of package: tube, Collector current: 20A, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 74ns, Gate charge: 82nC, Turn-off time: 232ns.