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LGEGW25N120S LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D585940B18A0DF&compId=LGEGW25N120S.pdf?ci_sign=46757ba5e0f909fc6b49ea5dc379992dcb5afacf Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
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Технічний опис LGEGW25N120S LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 25A, Power dissipation: 100W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 57ns, Turn-off time: 460ns.