
LGEGW50N65SEK LUGUANG ELECTRONIC

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
3+ | 143.70 грн |
9+ | 112.12 грн |
23+ | 105.80 грн |
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Технічний опис LGEGW50N65SEK LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 166W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 166W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 200nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 137ns, Turn-off time: 331ns.