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LGEGW60N65SEU LUGUANG ELECTRONIC

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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Power dissipation: 151W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 123ns
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Collector current: 60A

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Технічний опис LGEGW60N65SEU LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 60A; 151W; TO247, Type of transistor: IGBT, Power dissipation: 151W, Case: TO247, Mounting: THT, Gate charge: 0.21µC, Kind of package: tube, Pulsed collector current: 240A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 123ns, Turn-off time: 256ns, Gate-emitter voltage: ±20V, Collector current: 60A.