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LGEGW75N65FP

LGEGW75N65FP LUGUANG ELECTRONIC

LGEGW75N65FP.pdf Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Collector-emitter voltage: 650V
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Технічний опис LGEGW75N65FP LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 500W; TO247, Type of transistor: IGBT, Power dissipation: 500W, Case: TO247, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 215ns, Turn-off time: 225ns, Gate-emitter voltage: ±20V, Collector current: 75A, Pulsed collector current: 225A, Collector-emitter voltage: 650V.