LGEGW75N65FP LUGUANG ELECTRONIC
Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Collector current: 75A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 225A
Turn-on time: 215ns
Turn-off time: 225ns
Gate-emitter voltage: ±20V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.72 грн |
| 3+ | 244.64 грн |
| 10+ | 215.86 грн |
| 30+ | 201.47 грн |
| 120+ | 187.93 грн |
| 240+ | 182.00 грн |
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Технічний опис LGEGW75N65FP LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 500W; TO247, Type of transistor: IGBT, Power dissipation: 500W, Case: TO247, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Collector current: 75A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 225A, Turn-on time: 215ns, Turn-off time: 225ns, Gate-emitter voltage: ±20V.


