LTTH806RF5 Diodes Incorporated
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 600V 8A F5
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: F5
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Bulk
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Технічний опис LTTH806RF5 Diodes Incorporated
Description: DIODE GEN PURP 600V 8A F5, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: F5, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 45 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 3-PowerDFN, Packaging: Bulk.