LVE1560-M3/P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tube
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Технічний опис LVE1560-M3/P Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A GSIB-5S, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A, Current - Average Rectified (Io): 3.5 A, Voltage - Peak Reverse (Max): 600 V, Part Status: Obsolete, Supplier Device Package: GSIB-5S, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GSIB-5S, Packaging: Tube.
Інші пропозиції LVE1560-M3/P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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LVE1560-M3/P | Виробник : Vishay Semiconductors |
 Bridge Rectifiers 600V,15A Bridge |
товару немає в наявності |