Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > LVE2560-M3R/P
LVE2560-M3R/P

LVE2560-M3R/P Vishay General Semiconductor - Diodes Division

lve2560.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GSIB-5S
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: GSIB-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис LVE2560-M3R/P Vishay General Semiconductor - Diodes Division

Description: BRIDGE RECT 1P 600V 25A GSIB-5S, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A, Current - Average Rectified (Io): 25 A, Voltage - Peak Reverse (Max): 600 V, Supplier Device Package: GSIB-5S, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GSIB-5S, Packaging: Tape & Reel (TR).