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M1022LC120 IXYS

media?resourcetype=datasheets&itemid=0e88a28a-ecb9-478a-b794-1e7828244a86&filename=littelfuse_discrete_diodes_fast_recovery_m1022lc__0_datasheet.pdf Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
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Технічний опис M1022LC120 IXYS

Description: DIODE GEN PURP 1.2KV 1022A W4, Packaging: Box, Package / Case: DO-200AB, B-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 1022A, Supplier Device Package: W4, Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A, Current - Reverse Leakage @ Vr: 100 mA @ 1200 V.