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M29F200FB55M3E2 Micron Technology Inc.

M29F%28200%2C400%2C800%2C160%29F%28T%2CB%29_Rev.C%2C5%2C2018.pdf
Виробник: Micron Technology Inc.
Description: IC FLASH 2MBIT PARALLEL 44SO
Memory Type: Non-Volatile
Memory Size: 2Mbit
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Packaging: Tray
Write Cycle Time - Word, Page: 55ns
Part Status: Obsolete
Supplier Device Package: 44-SO
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Organization: 256K x 8, 128K x 16
Access Time: 55 ns
DigiKey Programmable: Not Verified
Memory Interface: Parallel
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Технічний опис M29F200FB55M3E2 Micron Technology Inc.

Description: IC FLASH 2MBIT PARALLEL 44SO, Memory Type: Non-Volatile, Memory Size: 2Mbit, Mounting Type: Surface Mount, Package / Case: 44-SOIC (0.496", 12.60mm Width), Packaging: Tray, Write Cycle Time - Word, Page: 55ns, Part Status: Obsolete, Supplier Device Package: 44-SO, Memory Format: FLASH, Technology: FLASH - NOR, Voltage - Supply: 4.5V ~ 5.5V, Operating Temperature: -40°C ~ 125°C (TA), Memory Organization: 256K x 8, 128K x 16, Access Time: 55 ns, DigiKey Programmable: Not Verified, Memory Interface: Parallel.