M3004316035NX0PTBR Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: IC RAM 4MBIT PAR 54TSOP
Memory Organization: 256K x 16
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 54-TSOP
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис M3004316035NX0PTBR Renesas Electronics Corporation
Description: IC RAM 4MBIT PAR 54TSOP, Memory Organization: 256K x 16, Access Time: 35 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 35ns, Supplier Device Package: 54-TSOP, Memory Format: RAM, Technology: MRAM (Magnetoresistive RAM), Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 105°C, Memory Type: Non-Volatile, Memory Size: 4Mbit, Mounting Type: Surface Mount, Package / Case: 54-TSOP (0.400", 10.16mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції M3004316035NX0PTBR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| M3004316035NX0PTBR | Виробник : Renesas Electronics |
MRAM M3004316 MRAM PARALLEL 4MB X16 35NS |
товару немає в наявності |