MAQ4123YME-TRVAO Microchip Technology
Виробник: Microchip Technology
Description: IC MOSFET DVR 3A L-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 11ns, 11ns
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.91 грн |
| 10+ | 180.46 грн |
| 25+ | 162.29 грн |
| 100+ | 138.52 грн |
| 250+ | 125.39 грн |
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Технічний опис MAQ4123YME-TRVAO Microchip Technology
Description: IC MOSFET DVR 3A L-SIDE 8SOIC, Part Status: Active, Current - Peak Output (Source, Sink): 3A, 3A, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 11ns, 11ns, Input Type: Inverting, Voltage - Supply: 4.5V ~ 20V, Operating Temperature: -40°C ~ 125°C (TJ), Packaging: Cut Tape (CT).