MAQ4123YME-TRVAO Microchip Technology
Виробник: Microchip TechnologyDescription: IC MOSFET DVR 3A L-SIDE 8SOIC
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Rise / Fall Time (Typ): 11ns, 11ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
на замовлення 464 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.27 грн |
| 10+ | 167.81 грн |
| 25+ | 150.91 грн |
| 100+ | 128.81 грн |
| 250+ | 116.6 грн |
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Технічний опис MAQ4123YME-TRVAO Microchip Technology
Description: IC MOSFET DVR 3A L-SIDE 8SOIC, Packaging: Cut Tape (CT), Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.5V ~ 20V, Input Type: Inverting, Rise / Fall Time (Typ): 11ns, 11ns, Channel Type: Independent, Driven Configuration: Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Current - Peak Output (Source, Sink): 3A, 3A, Part Status: Active.