MBR1045CTHC0G

MBR1045CTHC0G Taiwan Semiconductor Corporation


MBR1035CT%20SERIES_O2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 10A TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис MBR1045CTHC0G Taiwan Semiconductor Corporation

Description: DIODE ARR SCHOTT 45V 10A TO220AB, Current - Reverse Leakage @ Vr: 100 µA @ 45 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 45 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.