MCAC012N10YLHE3-TP Micro Commercial Components (MCC)
| Кількість | Ціна |
|---|---|
| 4+ | 85.41 грн |
| 10+ | 52.84 грн |
| 100+ | 30.26 грн |
| 500+ | 23.57 грн |
| 1000+ | 19.52 грн |
| 5000+ | 18.20 грн |
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Технічний опис MCAC012N10YLHE3-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET,DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 100W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції MCAC012N10YLHE3-TP за ціною від 20.99 грн до 87.07 грн
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MCAC012N10YLHE3-TP | Виробник : MCC (Micro Commercial Components) |
 Description: N-CHANNEL MOSFET,DFN5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 4913 шт: термін постачання 21-31 дні (днів) |
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MCAC012N10YLHE3-TP | Виробник : MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 100W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |