MCDS04N60-TP Micro Commercial Co


MCDS04N60.pdf
Виробник: Micro Commercial Co
Description: MOSFET N-CH
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251S
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
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Технічний опис MCDS04N60-TP Micro Commercial Co

Description: MOSFET N-CH, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-251S, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V.