MCG5D9N03YL-TP MCC (Micro Commercial Components)
Виробник: MCC (Micro Commercial Components)Description: N-CHANNEL MOSFET,DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 22W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.93 грн |
| 12+ | 27.17 грн |
| 100+ | 17.39 грн |
| 500+ | 12.36 грн |
| 1000+ | 11.09 грн |
| 2000+ | 10.01 грн |
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Технічний опис MCG5D9N03YL-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V, Power Dissipation (Max): 22W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V.
Інші пропозиції MCG5D9N03YL-TP за ціною від 9.10 грн до 51.75 грн
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MCG5D9N03YL-TP | Виробник : Micro Commercial Components (MCC) |
MOSFETs N-CHANNEL MOSFET,DFN3333 |
на замовлення 2419 шт: термін постачання 21-30 дні (днів) |
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MCG5D9N03YL-TP | Виробник : MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,DFN3333 Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 22W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V |
товару немає в наявності |