Технічний опис MCH3484-TL-W ON Semiconductor
Description: MOSFET N-CH 20V 4.5A SC70, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 2.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: SC-70FL/MCPH3, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V.
Інші пропозиції MCH3484-TL-W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MCH3484-TL-W | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Power dissipation: 1W Case: MCPH3 Gate-source voltage: ±5V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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MCH3484-TL-W | Виробник : onsemi |
Description: MOSFET N-CH 20V 4.5A SC70 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 2.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
товар відсутній |
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| MCH3484-TL-W | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Power dissipation: 1W Case: MCPH3 Gate-source voltage: ±5V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |