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MCH6663-TL-H

MCH6663-TL-H onsemi

MCH6663.pdf Виробник: onsemi
Description: MOSFET N/P-CH 30V 1.8A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Rds On (Max) @ Id, Vgs: 188mOhm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 6-MCPH
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Технічний опис MCH6663-TL-H onsemi

Description: MOSFET N/P-CH 30V 1.8A 6MCPH, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V, Rds On (Max) @ Id, Vgs: 188mOhm @ 900mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 6-MCPH.