Технічний опис MCU18N10-TP Micro Commercial Components
Description: MOSFET N-CH, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, Power Dissipation (Max): 47W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V.
Інші пропозиції MCU18N10-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MCU18N10-TP | Виробник : Micro Commercial Co |
 Description: MOSFET N-CHPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Power Dissipation (Max): 47W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V |
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