MCW200N10Y-TP

MCW200N10Y-TP MCC (Micro Commercial Components)


MCW200N10Y%28TO-247%29.pdf Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 200A
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 237 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13310 pF @ 50 V
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Технічний опис MCW200N10Y-TP MCC (Micro Commercial Components)

Description: MOSFET N-CH 200A, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V, Power Dissipation (Max): 312W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 237 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13310 pF @ 50 V.