Технічний опис MCW200N10YA-BP Micro Commercial Components
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10051 pF @ 50 V.
Інші пропозиції MCW200N10YA-BP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MCW200N10YA-BP | Виробник : MCC (Micro Commercial Components) |
 Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10051 pF @ 50 V |
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