MDD3401 NextGen Components

Description: MOSFET P-CH -30V -4.2A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.2A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3, Packaging: Tape & Reel (TR).