MDD50N03D
Виробник: MDDDescription: MOSFET N 30V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
на замовлення 640000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 28.73 грн |
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Технічний опис MDD50N03D MDD
Description: MOSFET N 30V 50A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Power Dissipation (Max): 28W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V.