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MDD7N65D

MDD7N65D


MDD7N65D0000SD.pdf?rlkey=7phff0q9c4ht5b2hnyvn7kejy&st=sjawxp4n&dl=0 Виробник: MDD
Description: MOSFET N 650V 7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
на замовлення 73876 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна
2500+100.09 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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Технічний опис MDD7N65D MDD

Description: MOSFET N 650V 7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V, Power Dissipation (Max): 100W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V.