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MG100UZ12GJ YANGJIE TECHNOLOGY

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Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ
Case: GJ-UZ
Application: Inverter; motors
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor

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Технічний опис MG100UZ12GJ YANGJIE TECHNOLOGY

Category: IGBT modules, Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 100A; GJ-UZ, Case: GJ-UZ, Application: Inverter; motors, Type of semiconductor module: IGBT, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Mechanical mounting: screw, Electrical mounting: screw, Semiconductor structure: single transistor.