MG150HF12TLC2 Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 833 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 4936.94 грн |
| 30+ | 4490.00 грн |
| 60+ | 4225.92 грн |
| 120+ | 3717.96 грн |
| 240+ | 3346.18 грн |
| 600+ | 3098.28 грн |
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Технічний опис MG150HF12TLC2 Yangjie Technology
Description: Transistors - IGBTs - Modules C2, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 833 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 150 A, Part Status: Active, IGBT Type: Trench, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 150A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.