MIW50N65AS2Y-BP

MIW50N65AS2Y-BP Micro Commercial Co


Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 148 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/83ns
Switching Energy: 1.89mJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 283 W
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Технічний опис MIW50N65AS2Y-BP Micro Commercial Co

Description: IGBT DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 148 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A, Supplier Device Package: TO-247AB, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/83ns, Switching Energy: 1.89mJ (on), 550µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 283 W.

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MIW50N65AS2Y-BP Виробник : Micro Commercial Components (MCC) MIW50N65AS2Y_TO_247AB_-3461614.pdf IGBTs
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