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MMBTA28-13-F

MMBTA28-13-F Diodes Incorporated

MMBTA28_Rev10_Feb2014.pdf
Виробник: Diodes Incorporated
Description: TRANS NPN DARL 80V 0.5A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис MMBTA28-13-F Diodes Incorporated

Description: TRANS NPN DARL 80V 0.5A SOT23-3, Power - Max: 310 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SOT-23-3, Frequency - Transition: 125MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).