MMFTP3008K DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.22nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1.4A
Case: SOT23
Drain-source voltage: -30V
Drain current: -360mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
кількість в упаковці: 1 шт
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Технічний опис MMFTP3008K DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V.
Інші пропозиції MMFTP3008K
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MMFTP3008K | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
товар відсутній |
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| MMFTP3008K | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -360mA; Idm: -1.4A; 500mW Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.22nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1.4A Case: SOT23 Drain-source voltage: -30V Drain current: -360mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.5W |
товар відсутній |