MMFTP3160-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2.6A
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.4W
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Технічний опис MMFTP3160-AQ Diotec Semiconductor
Description: MOSFET SOT-23 P -30V -2.6A, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.4W, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Інші пропозиції MMFTP3160-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MMFTP3160-AQ | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, SOT-23, -30V, -2.6A, 150C, P, AEC-Q101 |
товару немає в наявності |