MOT1112T Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 1+ | 744.51 грн |
| 10+ | 430.16 грн |
| 100+ | 258.10 грн |
| 500+ | 169.56 грн |
| 1000+ | 144.12 грн |
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Технічний опис MOT1112T Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 400A 0.85m Toll, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400A, Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V, Power Dissipation (Max): 347W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TOLL-8L, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V.