MOT15N10C Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 7+ | 47.47 грн |
| 11+ | 27.81 грн |
| 100+ | 16.65 грн |
| 500+ | 10.94 грн |
| 1000+ | 9.30 грн |
| 4200+ | 7.90 грн |
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Технічний опис MOT15N10C Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-251, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A, Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V.