MOT3N150V Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 1500V 3A 6 To3PF
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 8.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PF
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 1+ | 507.87 грн |
| 10+ | 293.74 грн |
| 100+ | 176.24 грн |
| 600+ | 115.78 грн |
Відгуки про товар
Написати відгук
Технічний опис MOT3N150V Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 1500V 3A 6 To3PF, Packaging: Tube, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 8.2Ohm @ 1.5A, 10V, Power Dissipation (Max): 90W, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3PF, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V.