MOT50N03C Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
| Кількість | Ціна |
|---|---|
| 7+ | 46.38 грн |
| 12+ | 26.80 грн |
| 100+ | 16.09 грн |
| 500+ | 10.57 грн |
| 1000+ | 8.98 грн |
| 4200+ | 7.63 грн |
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Технічний опис MOT50N03C Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-251, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A, Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-251 (IPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V.