MOT6111G Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 226A 2m PDFN5x6
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 226A
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 2+ | 308.97 грн |
| 10+ | 178.74 грн |
| 100+ | 107.22 грн |
| 500+ | 70.44 грн |
| 1000+ | 59.87 грн |
| 5000+ | 50.89 грн |
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Технічний опис MOT6111G Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 226A 2m PDFN5x6, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 226A, Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V, Power Dissipation (Max): 147W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 30 V.