MOT70N03D Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 7A 5.5m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 53W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 8+ | 43.93 грн |
| 12+ | 25.30 грн |
| 100+ | 15.19 грн |
| 500+ | 9.98 грн |
| 1000+ | 8.48 грн |
| 2500+ | 7.21 грн |
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Технічний опис MOT70N03D Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 7A 5.5m To-252, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V, Power Dissipation (Max): 53W, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V.