MOT7N65AC Guangdong Inmark Electronics Co., Ltd.
Виробник: Guangdong Inmark Electronics Co., Ltd.Description: MOSFET N-CH 650V 7A 1.12 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V
Power Dissipation (Max): 100W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.91 грн |
| 10+ | 57.52 грн |
| 100+ | 34.51 грн |
| 500+ | 22.67 грн |
| 1000+ | 19.27 грн |
| 4200+ | 16.38 грн |
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Технічний опис MOT7N65AC Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 7A 1.12 To251, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A, Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.5A, 10V, Power Dissipation (Max): 100W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.